? 2015 ixys corporation, all rights reserved ds100524b(5/15) high voltage power mosfet features ? high voltage package ? fast intrinsic diode ? avalanche rated ? molding epoxies meet ul 94 v-0 flammability classification ? high blocking voltage advantages ? easy to mount ? space savings ? high power density applications ? high voltage power supplies ? capacitor discharge applications ? pulse circuits IXTA3N120HV v dss = 1200v i d25 =3a r ds(on) ? ? ? ? ? 4.5 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 1200 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 1200 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c3a i dm t c = 25 ? c, pulse width limited by t jm 12 a i a t c = 25 ? c3a e as t c = 25 ? c 700 mj dv/dt i s ? i dm , v dd ? v dss ,t j ? 150 ? c 5 v/ns p d t c = 25 ? c 200 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c weight 2.5 g symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1200 v v gs(th) v ds = v gs , i d = 250 ? a 2.5 5.0 v i gss v gs = ? 20v, v ds = 0v ????????????????????? 100 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 125 ? c 1 ? ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 4.5 ? n-channel enhancement mode avalanche rated fast intrinsic diode g = gate d = drain s = source tab = drain g s to-263 d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA3N120HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 1.5 2.6 s c iss 1100 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 110 pf c rss 40 pf t d(on) 17 ns t r 15 ns t d(off) 32 ns t f 18 ns q g(on) 42 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 8 nc q gd 21 nc r thjc 0.62 ?? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 3 a i sm repetitive, pulse width limited by t jm 12 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 700 ns resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 4.7 ? (external) i f = i s , -di/dt = 100a/ ? s, v r = 100v to-263 (hv) outline pin: 1 - gate 2 - source 3 - drain
? 2015 ixys corporation, all rights reserved IXTA3N120HV fig. 1. output characteristics @ t j = 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 024681012 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ t j = 125oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 1.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 3a i d = 1.5a fig. 2. extended output characteristics @ t j = 25oc 0 1 2 3 4 5 6 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 5. r ds(on) normalized to i d = 1.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0123456 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA3N120HV fig. 7. input admittance 0 1 2 3 4 5 6 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 1 2 3 4 5 6 7 012345678 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 9 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 600v i d = 1.5a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig.12. forward-bias safe operating area 0.01 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds( on) limit 10ms dc
? 2015 ixys corporation, all rights reserved IXTA3N120HV fig. 13. maximum transient thermal impedance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w ixys ref: t_3n120(4u) 5-06-15-a
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